| Ferroelectric Memories | 
 enlarge | Author: James F. Scott
Publisher: Springer
Category: Book
List Price: $195.00
Buy New: $165.75
You Save: $29.25 (15%)
Sales Rank: 921510
Media: Hardcover
Edition: 1
Number Of Items: 1
Pages: 248
Shipping Weight (lbs): 1.2
Dimensions (in): 9.5 x 6.4 x 0.5
ISBN: 3540663878
Dewey Decimal Number: 621.39732
EAN: 9783540663874
Publication Date: June 8, 2000
Availability: Usually ships in 24 hours
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Product Description
Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students.
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